DC9013 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for use in 1w output amplifier of portable redios in class b push-pull operation. pinning 1 = emitter 2 = base 3 = collector characteristic symbol rating unit collector-base voltage vcbo 40 v collector-emitter voltage vceo 20 v emitter-base voltage vebo 5 v collector current ic 500 ma base current ib 100 ma total power dissipation pd 625 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) to-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) typ .190(4.83) .170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. dimensions in inches and (millimeters) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 40 - - v ic=100ma, ie=0 collector-emitter breakdown voltage bvceo 20 - - v ic=1ma, ib=0 emitter-base breakdown volatge bvebo 5 - - v ie=100ma, ic=0 collector cutoff current icbo - - 100 na vcb =25v, ie=0 emitter cutoff current iebo - - 100 na veb =3v, ic=0 collector-emitter saturation voltage (1) vce(sat) - - 0.6 v ic=500ma, ib=50ma base-emitter saturation voltage (1) vbe(sat) - - 1.2 v ic=500ma, ib=50ma base-emitter on voltage vbe(on) - - 0.9 v ic=10ma, vce=1v dc current gain(1) hfe1 64 120 300 - ic=50ma, vce=1v hfe2 40 - - - ic=500ma, vce=1v transition frequency ft 100 - - mhz ic=10ma, vce =1v, f=100mhz output capacitance cob - - 8 pf vcb =10v, f=1mhz electrical characteristics (ratings at 25oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank d e f g h i i1 i2 range 64~9 1 78~ 1 12 96~135 1 12~166 144~202 176~300 176~246 214~300 classification of hfe1
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